Weak fluence dependence of charge generation in ultra-thin oxides on silicon

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 369-372

  Farmer, K R ^a   Debauche, C P ^a,b   Giordano, A R ^a   Lundgren, P ^c   Andersson, M O ^c   Buchanan, D A ^d  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON TUNNELING; GATES (TRANSISTOR); OXIDES; POLYCRYSTALS; SEMICONDUCTING SILICON; TUNNEL DIODES;

CHARGE GENERATION;

MIS DEVICES;

EID: 0030235344     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00173-0     Document Type: Article

References (8)

1. Y. Taur et al., IEDM Tech. Dig. (1992) 35.6.1.
2. K.R. Farmer, M.O. Andersson and O. Engstrom, Appl. Phys. Lett. 60 (1992) 730.
3. D.A. Buchanan, D.J. DiMaria, C.A. Chang and Y. Taur, Appl. Phys. Lett. 65 (1994) 1820.
4. P. Lundgren, M.O. Andersson, K.R. Farmer and O. Engstrom, in: Proc. Insulating Films on Semiconductors, 1995, to be published.
5. P.V. Dressendorfer, PhD Thesis, Yale University (1978).
6. D. Vuillaume, Appl. Phys. Lett. 59 (1991) 3118.
7. D.J. DiMaria, J. Appl. Phys. 68 (1990) 5234.
8. M. Depas, B. Vermeire, P.W. Mertens, M. Meuris and M.M. Heyns, Semicond. Sci. Technol. 10 (1995) 753.