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Thin Solid Films

Volumn 283, Issue 1-2, 1996, Pages 75-80

Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements

(3) Grabowski, A a Nowak, M a Tzanetakis, P b

a SILESIAN UNIVERSITY OF TECHNOLOGY (Poland)

b UNIVERSITY OF CRETE (Greece)

Author keywords

Amorphous silicon; Optical properties; Photoconductivity; Semiconductors

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; ENERGY GAP; OPACITY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOCONDUCTIVITY; PHOTONS; QUANTUM THEORY; RADIATION; SEMICONDUCTOR MATERIALS; SPUTTERING;

ABSORPTION COEFFICIENT OF RADIATION; CARRIER LIFETIME; CARRIER PHOTOGENERATION; PHOTOGENERATION PARAMETER; QUANTUM EFFICIENCY COEFFICIENT; RADIATION INTENSITY; RECOMBINATION PARAMETER;

AMORPHOUS FILMS;

EID: 0030234850 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(95)08558-0 Document Type: Article

Times cited : (9)

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