Reaction layer formation at the interface between Ti or Zr and AlN

Physica Status Solidi (A) Applied Research

Volumn 157, Issue 1, 1996, Pages 99-106

  He, Xiangjun ^a   Yang, Size ^a   Du, Yong ^b   Tao, Kun ^b   Fan, Yudian ^b  

^a INSTITUTE OF PHYSICS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; FILM GROWTH; HOT PRESSING; INTERFACES (MATERIALS); METALLIC FILMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINTERING; THERMAL EFFECTS; THIN FILMS; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM COMPOUNDS;

REACTION LAYER FORMATION; SOLID STATE REACTIONS;

ALUMINUM COMPOUNDS;

EID: 0030234788     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211570113     Document Type: Article

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