-
3
-
-
0010922126
-
-
J.T. Remillard, W.H. Weber, J.R. McBride and R.E. Soltis, J. Appl. Phys., 71 (1992) 4515-4522.
-
(1992)
J. Appl. Phys.
, vol.71
, pp. 4515-4522
-
-
Remillard, J.T.1
Weber, W.H.2
McBride, J.R.3
Soltis, R.E.4
-
4
-
-
0041909437
-
The triode sputtering equipment for development and preparing of electron-gun and photo-electric devices
-
V.I. Shablov, E.I. Bercshkina and Z.M. Sharova, The triode sputtering equipment for development and preparing of electron-gun and photo-electric devices, Review of electron techniques, Seris 8 (1973) 139.
-
(1973)
Review of Electron Techniques, Seris 8
, pp. 139
-
-
Shablov, V.I.1
Bercshkina, E.I.2
Sharova, Z.M.3
-
6
-
-
36449007376
-
Aluminum oxide thin films prepared by chemical vapor deposition from aluminum acetylacetonate
-
T. Maruyama and S. Arai, Aluminum oxide thin films prepared by chemical vapor deposition from aluminum acetylacetonate, Appl. Phys. Lett., 60 (1992) 322-323.
-
(1992)
Appl. Phys. Lett.
, vol.60
, pp. 322-323
-
-
Maruyama, T.1
Arai, S.2
-
7
-
-
0042911446
-
Low temperature homo and hetero epytaxy of sapphire films by reactive ionized cluster beam deposition
-
H. Hirayama, G. Takaoka, H. Usil and I. Yamada, Low temperature homo and hetero epytaxy of sapphire films by reactive ionized cluster beam deposition, Nucl. Instr. Meth. Phys. Res., B59/60 (1991) 207-210.
-
(1991)
Nucl. Instr. Meth. Phys. Res.
, vol.B59-60
, pp. 207-210
-
-
Hirayama, H.1
Takaoka, G.2
Usil, H.3
Yamada, I.4
-
8
-
-
0024737485
-
Thin film deposition by magnetron sputerring and determination of some physic parameters
-
M.M.D. Ramos, J.B. Almeida, M.I.C. Ferreira and M.P. Dos Santos, Thin film deposition by magnetron sputerring and determination of some physic parameters, Thin Solid Films, 176 (1989) 219-226.
-
(1989)
Thin Solid Films
, vol.176
, pp. 219-226
-
-
Ramos, M.M.D.1
Almeida, J.B.2
Ferreira, M.I.C.3
Dos Santos, M.P.4
-
9
-
-
21144474237
-
Reactive alternating current magnetron sputtering of dielectric layers
-
M. Scherer, J. Schmitt, R. Latz and M. Schanz, Reactive alternating current magnetron sputtering of dielectric layers, J. Vac. Sci. Technol. A, 10 (1992) 1772-1776.
-
(1992)
J. Vac. Sci. Technol. A
, vol.10
, pp. 1772-1776
-
-
Scherer, M.1
Schmitt, J.2
Latz, R.3
Schanz, M.4
-
14
-
-
0012263264
-
Structure and conductance evolution of very thin indium oxide films
-
V. Korobov, M. Leibovitch and Y. Shapira, Structure and conductance evolution of very thin indium oxide films, Appl. Phys. Lett., 65, 18 (1994) 2290-2292.
-
(1994)
Appl. Phys. Lett.
, vol.65
, Issue.18
, pp. 2290-2292
-
-
Korobov, V.1
Leibovitch, M.2
Shapira, Y.3
-
15
-
-
34247097777
-
Effects of oxygen partial pressure on the microstructure and electrical properties of indium tin oxide film prepared by D.C. Magnetron sputtering
-
Chaun Gi Choi, Kwangsoo No, Won-Jae Lee, Ho-Gi Kim, SooOk Jung, Won Jong Lee, Wook Sung Kim, Se Jong Kim and Cheon Yoon, Effects of oxygen partial pressure on the microstructure and electrical properties of indium tin oxide film prepared by D.c. magnetron sputtering, Thin solid Films, 258 (1995) 274-278.
-
(1995)
Thin Solid Films
, vol.258
, pp. 274-278
-
-
Choi, C.G.1
No, K.2
Lee, W.-J.3
Kim, H.-G.4
Jung, S.5
Lee, W.J.6
Kim, W.S.7
Kim, S.J.8
Yoon, C.9
-
16
-
-
0024887069
-
The deposition of transparent conductive oxide thin films onto large sheets of glass, acrilic and polycarbonate
-
A. Murkherhee, The deposition of transparent conductive oxide thin films onto large sheets of glass, acrilic and polycarbonate, Vacuum, 39 (1989) 537-540.
-
(1989)
Vacuum
, vol.39
, pp. 537-540
-
-
Murkherhee, A.1
-
17
-
-
0025468302
-
Shottky diode properties and the photovoltaic behavior of indium tin oxide (ITO)/n-GaAs junctions - Effect of arsenic deficient GaAs surface
-
N. Balasubramanian and A. Subrahmaniam, Shottky diode properties and the photovoltaic behavior of indium tin oxide (ITO)/n-GaAs junctions - effect of arsenic deficient GaAs surface, Semicond. Sci. Technol., 5 (1990) 871-876.
-
(1990)
Semicond. Sci. Technol.
, vol.5
, pp. 871-876
-
-
Balasubramanian, N.1
Subrahmaniam, A.2
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