Properties of insulated gate field-effect transistors with a polyaniline gate electrode

Thin Solid Films

Volumn 286, Issue 1-2, 1996, Pages 252-255

  Liess, Martin ^a   Chinn, Douglas ^a   Petelenz, Danuta ^a   Janata, Jiří ^b  

^a UNIVERSITY OF UTAH   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Electrochemistry; Field effect; Polymers; Work function

Indexed keywords

AROMATIC POLYMERS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; FIELD EFFECT SEMICONDUCTOR DEVICES; GAS SENSING ELECTRODES; GATES (TRANSISTOR);

DEVICE BEHAVIOR SIMULATION; INSULATED GATE; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0030234065     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(95)08233-6     Document Type: Article

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