Fullerene (C60) adsorption and films growth on the (√3×√3) and (3×3) surface of 6H SiC(0001)

Journal De Physique. IV : JP

Volumn 6, Issue 5, 1996, Pages 173-177

  Li, L ^a   Hasegawa, Y ^a   Shinohara, H ^a   Sakurai, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; EPITAXIAL GROWTH; FILM GROWTH; FULLERENES; MOLECULES; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; STRUCTURE (COMPOSITION); SUBSTRATES; SURFACES;

FULLERENE ADSORPTION; MULTILAYER GROWTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030233853     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)