Ga-Se films grown on a GaAs(001) surface at high temperature using a thermal evaporation of GaSe

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 570-574

  Izumi, T ^a   Nishiwaki, H ^a   Tambo, T ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EVAPORATION; FILM GROWTH; SEMICONDUCTING SELENIUM COMPOUNDS; SURFACE STRUCTURE; THERMAL EFFECTS; THICK FILMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030233788     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00204-8     Document Type: Article

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