Fluorine adsorption on GaAs(110) surfaces and the onset of etching after XeF 2 exposures

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 95-100

  Nienhaus, H ^a   Monch W ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BAND STRUCTURE; CHEMISORPTION; ETCHING; FLUORINE; FLUORINE COMPOUNDS; SURFACE PHENOMENA; XENON;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030233545     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00126-2     Document Type: Article

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