Development of the Na/GaAs(111)A-(2 x 2) interface at room and low temperature

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 234-239

  Thornton, J M C ^a   Weightman, P ^a   Bailey, P ^b   Woolf, D A ^c   Laine, A D ^d   Evans, D A ^e  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c UWCC   (United Kingdom)

^d UNIVERSITY OF MESSINA   (Italy)

^e GLYNDWR UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); METALLIZING; PHOTOEMISSION; SODIUM; SPECTRUM ANALYSIS; SURFACE STRUCTURE; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030233514     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00150-X     Document Type: Article

References (10)

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