Design and fabrication of GaAs/AlGaAs single electron transistors based on in-plane Schottky gate control of 2DEG

Physica B: Condensed Matter

Volumn 227, Issue 1-4, 1996, Pages 112-115

  Tomozawa, H ^a   Jinushi, K ^a   Okada, H ^a   Hashizume, T ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

GaAs AlGaAs; In plane gate; Simulation of 3D potential distribution; Single electron transistor

Indexed keywords

DESIGN; MANUFACTURE; MESFET DEVICES; OSCILLATIONS; SIMULATION; TEMPERATURE;

IN-PLANE-GATE; SINGLE ELECTRON TRANSISTOR;

TRANSISTORS;

EID: 0030232694     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(96)00376-6     Document Type: Article

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