Electrical properties of ZnO varistors prepared by microwave sintering process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 A, 1996, Pages 4696-4703

  Chen, Chang Shun ^a   Kuo, Cheng Tzu ^a   Lin, I Nan ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Barrier height; Degradation; Densification rate; Microwave sintering; ZnO varistor

Indexed keywords

MICROWAVE SINTERING;

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MICROWAVE HEATING; SEMICONDUCTING ZINC COMPOUNDS; SINTERING; VARISTORS;

SEMICONDUCTOR DEVICES;

EID: 0030232536     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4696     Document Type: Article

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