Preparation of copper sulfide thin layers by a single source MOCVD process

Chemical Vapor Deposition

Volumn 2, Issue 5, 1996, Pages 174-179

  Nomura, Ryoki ^a   Miyawaki, Keico ^a   Toyosaki, Takayuki ^a   Matsuda, Haruo ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SURFACE PROPERTIES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CUPROUS SULFIDE THIN FILMS; ENERGY DISPERSIVE X RAY ANALYSIS (EDAX); MASS FRAGMENTATION;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030232241     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.19960020504     Document Type: Article

References (10)