Surface and interface studies of titanium silicide formation

Thin Solid Films

Volumn 283, Issue 1-2, 1996, Pages 130-134

  Wee, A T S ^a   Huan, A C H ^a   Osipowicz, T ^a   Lee, K K ^a   Thian, W H ^a   Tan, K L ^a   Hogan, R ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Rutherford backscattering spectroscopy; secondary ion mass spectrometry (SIMS); Silicides; Titanium

Indexed keywords

ANNEALING; DIFFUSION; INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SURFACES; TEMPERATURE; THIN FILMS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

PRODUCTION FURNACE; SNOWPLOUGH EFFECT; TITANIUM SILICIDE; VACUUM ANNEALING;

TITANIUM COMPOUNDS;

EID: 0030231790     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08504-1     Document Type: Article

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