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Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 256-260

Radiation detector properties of CdTe0.9Se0.1: C1 crystals grown under microgravity in a rotating magnetic field

(8) Fiederle, M a Eiche, C b Joerger, W b Salk, M b Senchenkov, A S c Egorov, A V c Ebling, D G a Benz, K W a,b

a Freiburger M (Germany)

b UNIVERSITY OF FREIBURG (Germany)

c SPLAV Technical Center (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; HEAT CONVECTION; MAGNETIC FIELD EFFECTS; MASS TRANSFER; MICROGRAVITY PROCESSING; RADIATION DETECTORS; SEMICONDUCTOR GROWTH;

ADMITTANCE SPECTROSCOPY; PHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS); TIME DEPENDENT CHARGE MEASUREMENT (TDCM);

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030230873 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00074-7 Document Type: Article

Times cited : (31)

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