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Volumn 24, Issue 2, 1996, Pages 151-167

Asymptotic waves for the hydrodynamical model of semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ASYMPTOTIC STABILITY; COMPUTER SIMULATION; HYDRODYNAMICS; MATHEMATICAL MODELS; NUMERICAL METHODS; SEMICONDUCTOR MATERIALS;

EID: 0030230253     PISSN: 01652125     EISSN: None     Source Type: Journal    
DOI: 10.1016/0165-2125(96)00012-1     Document Type: Article
Times cited : (3)

References (25)
  • 3
    • 15444374180 scopus 로고
    • Extended thermodynamics of the blotekjaer hydrodynamical model for semiconductors
    • A.M. Anile and S. Pennisi, "Extended thermodynamics of the Blotekjaer hydrodynamical model for semiconductors", Cont. Mech. Thermodyn. 4, 187-197 (1992).
    • (1992) Cont. Mech. Thermodyn. , vol.4 , pp. 187-197
    • Anile, A.M.1    Pennisi, S.2
  • 4
    • 0001297101 scopus 로고
    • Thermodynamic derivation of the hydrodynamical model from charge transport in semiconductors
    • A.M. Anile and S. Pennisi, "Thermodynamic derivation of the hydrodynamical model from charge transport in semiconductors", Phys. Rev. B 46, 13 186-13 193 (1992).
    • (1992) Phys. Rev. B , vol.46 , pp. 13186-13193
    • Anile, A.M.1    Pennisi, S.2
  • 8
    • 0027574577 scopus 로고
    • A critical examination of the assumptions underlying macroscopic transport equations for silicon device
    • M.A. Stettler, M.A. Alam and M.S. Lundstrom, "A critical examination of the assumptions underlying macroscopic transport equations for Silicon device", IEEE Trans. Electron Devices 40, 733-739 (1993).
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 733-739
    • Stettler, M.A.1    Alam, M.A.2    Lundstrom, M.S.3
  • 10
    • 0024665830 scopus 로고
    • Numerical methods for the hydrodynamic device model: Subsonic flow
    • C.L. Gardner, J.W. Jerome and D.J. Rose, "Numerical Methods for the hydrodynamic Device Model: Subsonic Flow", IEEE Trans. Comput Aided Design 8, 501-507 (1989).
    • (1989) IEEE Trans. Comput Aided Design , vol.8 , pp. 501-507
    • Gardner, C.L.1    Jerome, J.W.2    Rose, D.J.3
  • 11
    • 0026105521 scopus 로고
    • Numerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device
    • C.L. Gardner, "Numerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device," IEEE Trans. Electronic Device 38, 392-398 (1991).
    • (1991) IEEE Trans. Electronic Device , vol.38 , pp. 392-398
    • Gardner, C.L.1
  • 12
    • 0022044296 scopus 로고
    • An investigation of steady-state velocity overshoot in silicon
    • G. Baccarani and M.R. Wordeman, "An investigation of steady-state velocity overshoot in silicon", Solid State Electron 28, 407 (1985).
    • (1985) Solid State Electron , vol.28 , pp. 407
    • Baccarani, G.1    Wordeman, M.R.2
  • 13
    • 0029260011 scopus 로고
    • + devices by a hydrodynamic model: Subsonic and supersonic flows
    • + devices by a hydrodynamic model: Subsonic and supersonic flows", COMPEL 14, 1-18 (1995).
    • (1995) COMPEL , vol.14 , pp. 1-18
    • Anile, A.M.1    Maccora, C.2    Pidatella, R.M.3
  • 14
    • 35949009958 scopus 로고
    • Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
    • M.V. Fischetti and S. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects", Phys. Rev. B 38, 9721-9745 (1988).
    • (1988) Phys. Rev. B , vol.38 , pp. 9721-9745
    • Fischetti, M.V.1    Laux, S.2
  • 15
    • 0026116329 scopus 로고
    • Monte carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures-part I: Homogeneous transport
    • M.V. Fischetti, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures-Part I: Homogeneous Transport", IEEE Trans. Electron Device 38, 634-649 (1991); also M.V. Fischetti and S. Laux, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures-Part II: Submicrometer MOSFET's", IEEE Trans. Electron Device 38, 650-660 (1991).
    • (1991) IEEE Trans. Electron Device , vol.38 , pp. 634-649
    • Fischetti, M.V.1
  • 16
    • 0026121721 scopus 로고
    • Monte carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures-part II: Submicrometer MOSFET's
    • M.V. Fischetti, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures-Part I: Homogeneous Transport", IEEE Trans. Electron Device 38, 634-649 (1991); also M.V. Fischetti and S. Laux, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures-Part II: Submicrometer MOSFET's", IEEE Trans. Electron Device 38, 650-660 (1991).
    • (1991) IEEE Trans. Electron Device , vol.38 , pp. 650-660
    • Fischetti, M.V.1    Laux, S.2
  • 19
    • 0039252655 scopus 로고
    • Transient linear and weakly non-linear viscoelastic waves
    • F. Mainardi, ed., Pitman, Boston
    • L. Brun and A. Molinari, "Transient linear and weakly non-linear viscoelastic waves", in: F. Mainardi, ed., Wave Propagation in Viscoelastic Media, Pitman, Boston (1982) 65-94.
    • (1982) Wave Propagation in Viscoelastic Media , pp. 65-94
    • Brun, L.1    Molinari, A.2
  • 24
    • 0026107291 scopus 로고
    • Solution of the hydrodynamic device model using high-order nonoscillatory shock capturing algorithms
    • E. Fatemi, J. Jerome and S. Osher, "Solution of the hydrodynamic device model Using high-order nonoscillatory shock capturing algorithms", IEEE Trans. comput. Aided Design 10, 232-244 (1991).
    • (1991) IEEE Trans. Comput. Aided Design , vol.10 , pp. 232-244
    • Fatemi, E.1    Jerome, J.2    Osher, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.