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Volumn 69, Issue 5, 1996, Pages 790-793
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Influence of the initial temperature of silicon on crystallization of a layer melted by nanosecond laser heating
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NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLIZATION;
HEATING;
NUMERICAL ANALYSIS;
PHASE TRANSITIONS;
PULSED LASER APPLICATIONS;
TEMPERATURE;
LASER HEATING;
MELTED LAYERS;
STEFAN PROBLEM;
TEMPERATURE INFLUENCE;
SEMICONDUCTING SILICON;
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EID: 0030223955
PISSN: 00210285
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (15)
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References (9)
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