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Volumn 32, Issue 18, 1996, Pages 1703-1704

DC electroluminescence from PECVD grown thin films of silicon-rich silica

Author keywords

Electroluminescence; Semiconductor thin films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON DEVICE MANUFACTURE; EMISSION SPECTROSCOPY; LUMINESCENT DEVICES; MOS DEVICES; SILICA; SILICON WAFERS; THIN FILMS;

EID: 0030219487     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961122     Document Type: Article
Times cited : (11)

References (10)
  • 1
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • CANHAM, L.T.: 'Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers', Appl. Phys. Lett., 1990, 57, (10), pp. 1046-1050
    • (1990) Appl. Phys. Lett. , vol.57 , Issue.10 , pp. 1046-1050
    • Canham, L.T.1
  • 5
    • 0001315569 scopus 로고    scopus 로고
    • The origin of photoluminescence from thin films of silicon-rich silica
    • KENYON, A.J., TRWOGA, P.F., PITY, C.W., and REHM, G.: 'The origin of photoluminescence from thin films of silicon-rich silica', J. Appl. Phys., 1996, 79, (12), pp. 9291-9300
    • (1996) J. Appl. Phys. , vol.79 , Issue.12 , pp. 9291-9300
    • Kenyon, A.J.1    Trwoga, P.F.2    Pity, C.W.3    Rehm, G.4
  • 9
    • 0029345914 scopus 로고
    • Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation
    • LONI, A., SIMMONS, A.J., COX, T.I., CALCOTT, P.D.J., and CANHAM, L.T.: 'Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation', Electron. Lett., 1995, 31, (15), pp. 1288-1289
    • (1995) Electron. Lett. , vol.31 , Issue.15 , pp. 1288-1289
    • Loni, A.1    Simmons, A.J.2    Cox, T.I.3    Calcott, P.D.J.4    Canham, L.T.5
  • 10
    • 0029224522 scopus 로고
    • Modelling the multiplicity of conductance structures in clusters of silicon quantum dots
    • BOERINGER, D.W., and TSU, R.: 'Modelling the multiplicity of conductance structures in clusters of silicon quantum dots'. Microcrystall. and Nanocrystall. Semicond. Symp., 1995, pp. 569-574
    • (1995) Microcrystall. and Nanocrystall. Semicond. Symp. , pp. 569-574
    • Boeringer, D.W.1    Tsu, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.