SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 267-270

Electrical properties of boron-doped diamond films prepared by microwave plasma chemical vapour deposition

(3) Deguchi, Masahiro a Kitabatake, Makoto a Hirao, Takashi b

a PANASONIC CORPORATION (Japan)

b Matsushita Technoresearch Inc (Japan)

Author keywords

Boron; Chemical vapour deposition; Diamond; Electrical properties and measurements

Indexed keywords

ACTIVATION ENERGY; BORON; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; FILM GROWTH; MICROWAVES; PIEZOELECTRICITY; PLASMAS; STRAIN GAGES; THERMAL EFFECTS;

DIAMOND GROWTH; HALL MOBILITY; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; PIEZORESISTIVE EFFECT; TEMPERATURE DEPENDENCE; TRANSITIONAL TEMPERATURE;

SEMICONDUCTING FILMS;

EID: 0030219440 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(96)08649-X Document Type: Article

Times cited : (18)

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