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Two-mask step-inverted staggered a-Si TFT-addressed LCDs
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2
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Very simple a-Si: H TFT fabrication process for LCD-TV application
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M. L. Contellec, F. Maurice, J. Richard, B. Vinouze, and F. Richou, "Very simple a-Si: H TFT fabrication process for LCD-TV application," Journal of Non-Crystalline Solids 97 & 98, pp. 297-300, 1987.
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Y. Chousan, A. Rolland, J. Grino, R. Boutroy, G. Boisseau, and N. Szydlo, "3STFT: An extension of 2S TFT for projection application," Proc. of Eurodisplay '93, pp. 207-210, Sept. 1993.
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A three-mask process for high mobility a-Si: H TFTs
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J. Glueck, E. Lueder, T. Kallfass, F. Hirschburger, and M. Brikenstein, "A three-mask process for high mobility a-Si: H TFTs," Proc. of Eurodisplay '93, pp. 203-206, Sept. 1993.
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A 14-in.-diagonal a-Si TFT-AMLCD for PAL-TV
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J. Glueck, E. Lueder, T. Kallfass, H. -U. Lauer, D. Straub, and S. Huttelmaier, "A 14-in.-diagonal a-Si TFT-AMLCD for PAL-TV," Society for Information Display 94 Digest, pp. 263-266, June 1994.
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A simplified 4 photomask process for 24 cm diagonal TFT-LCDs
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K. Ono, H. Sakuta, T. Suzuki, N. Konishi, M. Hiroshima, K. Onisawa, and M. Tsumura, "A simplified 4 photomask process for 24 cm diagonal TFT-LCDs," Proc. of Asia Display '95, pp. 693-696, Oct. 1995.
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Geometrical study of the staggered type a-Si TFTs structure for low cost AMLCD process
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A new patterning process concept for large-area transistor circuit fabrication without using an optical mask aligner
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Y. Mikami, Y. Nagae, Y. Mori, K. Kuwabara, T. Saito, H. Hayama, H. Asada, Y. Akimoto, M. Kobayashi, S. Okazaki, K. Asaka, H. Matui, K. Nakamura, and E. Kaneko, "A new patterning process concept for large-area transistor circuit fabrication without using an optical mask aligner," IEEE Trans. Electron Devices, vol. 41, no. 3, pp. 306-314, March 1994.
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K. Fujii, Y. Tanaka, K. Honda, H. Tsusui, H. Koseki, and S. Hotta, "Process techniques of 15-inch full-color high-resolution liquid crystal displays addressed by a-Si thin film transistors," Jpn. J. Appl. Phys., vol. 31, no. 12B, pp. 4574-4578, Dec. 1992.
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K. Ono, T. Suzuki, H. Sakuta, K. Anno, K. Ogawa, and N. Konishi, "Molybdenum silicide formation on amorphous silicon films to realize a simplified thin film transistor for producing liquid crystal displays," to be submitted for publication.
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Molybdenum Silicide Formation on Amorphous Silicon Films to Realize a Simplified Thin Film Transistor for Producing Liquid Crystal Displays
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K. Ono, T. Tanaka, J. Ohiida, J. Ohwada, and N. Konishi, "Effects of line resistance and parasitic capacitance on transmittance distribution in TFT-LCDs," IEICE Trans. Electron., vol. E75-C, no. 1, pp. 93-100, Jan. 1992.
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