Silicon oxide thin films obtained by Ar+ bombardment of Si(100) in oxygen atmosphere at room temperature

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 116, Issue 1-4, 1996, Pages 416-419

  Terrasi, A ^a   Almeida, J ^b   Coluzza, C ^b   Margaritondo, G ^b  

^a CNR   (Italy)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ION BEAMS; OXYGEN; PRESSURE EFFECTS; SILICA; SILICON WAFERS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CORE LEVEL SPECTRA; ENERGY RESOLUTION; ION BEAM ENERGY; IRRADIATION TIME; OXIDE PRESSURE;

ION BOMBARDMENT;

EID: 0030218752     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00080-8     Document Type: Article

References (10)

1. S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969).
2. E.H. Nicollian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
3. B.E. Deal, in: Semiconductor Materials and Process Technology Handbook, ed. G.E. McGuire (Noyes, New Jersey, 1988).
4. F.J. Grunthaner and P.J. Grunthaner, Mater. Sci. Rep. 1 (1986) 65.
5. U. Gelius, B. Wannberg, P. Baltzer, H. Felllner-Feldegg, G. Carlsson, C.G. Johansson, J. Larsson, P. Münger and G. Vegerfors, J. Electr. Spectrosc. and Related Phen. 52 (1990) 747.
6. F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarmoff and G. Hollinger, Phys. Rev. B 38 (1988) 6084 and references therein.
7. M. Tabe, T.T. Chiang, I. Lindau and W.E. Spicer, Phys. Rev. B 34 (1986) 2706.
8. A. Namiki, K. Tanimoto, T. Nakamura, N. Ohtake and T. Suzaki; Surf. Sci. 222 (1989) 530.
9. A. Terrasi, C. Coluzza and G. Margaritondo, J. Appl. Phys. 78 (6) (1995) 3820.
10. T.L. Barr, in: Practical Surface Analysis, eds. D. Briggs and M.P. Seah (Wiley, New York, 1990).