Nanoscale Al patterning on an STM-manipulated Si surface

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 640-643

  Ono, T ^a   Hamanaka, H ^a   Kurabayashi, T ^a   Minami, K ^a   Esashi, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Chemical vapour deposition (CVD); Scanning tunnelling microscopy (STM)

Indexed keywords

ADSORPTION; ALUMINUM; ATOMS; CHEMICAL VAPOR DEPOSITION; DESORPTION; HYDROGEN; OXIDATION; OXYGEN; SCANNING TUNNELING MICROSCOPY; SILICON;

DIMETHYLALUMINIUM HYDRIDE; HYDROGEN ATOMS; NANOSCALE ALUMINUM PATTERNING;

SURFACES;

EID: 0030218619     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08705-6     Document Type: Article

References (11)

1. D.M. Eigler and E.K. Schweizer, Nature, 344 (1990) 524.
2. I.W. Lyo and P. Avouries, Science, 253 (1991) 173.
3. M.A. McCord, D.P. Kern and T.H.P. Chang, J. Vac. Sci. Technol., B6 (1988) 1877.
4. J.A. Dagata, J. Schneir, H.H. Haray, C.J. Evans, M.T. Postek and J. Bennet, Appl. Phys. Lett., 56 (1990) 2001.
5. N.E. Miller, I. Beinglass, Solid. State. Technol., (1982) 85.
6. K. Masu and K. Tubouchi, J. Vac. Sci. Tecnol., B12 (1994) 3270.
7. H. Kuramochi, H. Uchida and M. Aono, Phys. Rev. Lett., 72 (1994) 932.
8. C. Wagner, Z. Phys. Chem., A159 (1932) 459.
9. R.S. Becker, G.S. Higashi, Y.J. Chambel and A.J. Becker, Phys. Rev. Lett., 65 (1990) 1917.
10. J.W. Lyding, T.-C. Shen, J.S. Hubacek, J.R. Tucker and G.C. Abeln, Appl. Phys. Lett., 64 (1994) 2010.
11. G.D. Kubiak and R.H. Stulen, J. Vac. Sci. Tecnol., A4 (1986) 1427.