Nanofabrication on n-GaAs surface using a scanning tunnelling microscope in a Ni-salt solution

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 606-609

  Kaneshiro, C ^a   Okumura, T ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

Etching; Gallium arsenide; Nanostructures; Scanning tunnelling microscopy

Indexed keywords

CHARGE CARRIERS; DEPOSITION; ELECTRIC FIELDS; ELECTROCHEMISTRY; ETCHING; NANOSTRUCTURED MATERIALS; NICKEL; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SOLUTIONS; SURFACES;

ANODIC ETCHING; ELECTROCHEMICAL ETCHING; INJECTED CARRIERS; SALT SOLUTION;

NANOTECHNOLOGY;

EID: 0030218386     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08695-6     Document Type: Article

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