Electron energy loss fine structure measurements of silicon nitride films

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 318-320

  Tsukajima, J ^a   Arai, K ^a   Takatoh, S ^a   Enokijima, T ^a   Hayashi, T ^a   Yikegaki, T ^a   Kashiwagi, A ^b   Tokunaga, K ^b   Suzuki, T ^b   Fujikawa, T ^c   Usami, S ^d  

^a TOSOH CORPORATION   (Japan)

^b Semiconductor Company   (Japan)

^c CHIBA UNIVERSITY   (Japan)

^d KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical vapour deposition (CVD); Electron energy loss spectroscopy; Silicon nitride; Silicon oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; HEAT TREATMENT; NITRIDING; NITROGEN; SILICA; SILICON NITRIDE; THICKNESS MEASUREMENT;

ELECTRON ENERGY LOSS FINE STRUCTURE MEASUREMENT; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NITROGEN K EDGE ELECTRON ENERGY LOSS NEAR EDGE STRUCTURE SPECTRA; RAPID THERMAL NITRIDATION PRETREATMENT; SMALL SCATTERING ANGLE;

THIN FILMS;

EID: 0030217731     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08637-3     Document Type: Article

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