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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 116, Issue 1-4, 1996, Pages 482-485

Atomic force microscopy on SiO2 layers grown on Ge implanted silicon

(4) Raineri, V a Lombardo, S a Iacona, F a La Via, F a

a CNR IMETEM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICA; SURFACE ROUGHNESS;

GERMANIUM SILICIDE; OXIDE LAYER; SOLID PHASE EPITAXY;

ATOMIC FORCE MICROSCOPY;

EID: 0030217355 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(96)00093-6 Document Type: Article

Times cited : (3)

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