Temperature dependence of silicon precipitation in thin surface layer of Si3N4 induced by excimer laser irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 116, Issue 1-4, 1996, Pages 410-415

  Kurosawa, Kou ^a,d   Nakamae, Kazuo ^b,d   Takigawa, Yasuo ^c,d   Sasaki, Wataru ^a,d   Kato, Yoshiaki ^d   Okuda, Masahiro ^b  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b Osaka Prefecture University   (Japan)

^c OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; EXCIMER LASERS; LASER BEAM EFFECTS; LASER PULSES; PRECIPITATION (CHEMICAL); SATURATION (MATERIALS COMPOSITION); SILICON; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

EXCIMER LASER IRRADIATION; LASER FLUENCE; SILICON PRECIPITATION;

SURFACES;

EID: 0030217229     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00079-1     Document Type: Article

References (7)

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