Formation and characteristics of lead lanthanum zirconium titanate thin films formed by using the r.f. sputtering method

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 4, 1996, Pages 309-313

  Hwang, Yoo Sang ^a,b   Paek, Su Hyon ^a   Lee, Joo Hyon ^a   Park, Chi Son ^a   Choi, Jin Seog ^a   Jung, Jae Kyung ^a   Kim, Yong Nam ^a  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; CRYSTALLIZATION; ELECTRIC PROPERTIES; FILM PREPARATION; LEAD COMPOUNDS; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

LEAD LANTHANUM ZIRCONIUM TITANATE; RADIOFREQUENCY SPUTTERING METHOD; REMANENT POLARIZATION; SPUTTERING TARGET;

DIELECTRIC FILMS;

EID: 0030217106     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00188960     Document Type: Article

References (7)

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