Optimized second-harmonic generation in asymmetric double quantum wells

IEEE Journal of Quantum Electronics

Volumn 32, Issue 8, 1996, Pages 1334-1346

  Vurgaftman, Igor ^b,d,e   Meyer, Jerry R ^a,b,f,g   Ram Mohan, L Ramdas ^{a,c,h,i,j,k,l,m,n,o}  

^a IEEE

^b NAVAL RESEARCH LABORATORY   (United States)

^c WORCESTER POLYTECHNIC INSTITUTE   (United States)

^d BOSTON UNIVERSITY   (United States)

^e UNIVERSITY OF MICHIGAN   (United States)

^f UNIVERSITY OF TENNESSEE   (United States)

^g BROWN UNIVERSITY   (United States)

^h UNIVERSITY OF DELHI   (India)

ⁱ PURDUE UNIVERSITY   (United States)

^j FREIE UNIVERSITÄT BERLIN   (Germany)

^k Department of Physics ^*

^l UNIVERSITY OF NOTRE DAME   (United States)

^m UNIVERSITY OF MISSOURI   (United States)

ⁿ NEC CORPORATION   (Japan)

^o AMERICAN PHYSICAL SOCIETY   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; OPTIMIZATION; REFRACTIVE INDEX; SECOND HARMONIC GENERATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; WAVEGUIDES;

ASYMMETRIC DOUBLE QUANTUM WELLS; PUMP BEAM INTENSITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030216946     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.511546     Document Type: Article

References (47)

1. M. K. Gurnick and T. A. DeTemple, "Synthetic nonlinear semiconductors," IEEE J. Quantum Electron., vol. QE-19, pp. 791-794, 1983.
2. Z. Iconic, V. Milanovic, and D. Tjapkin, "Resonant second harmonic generation by a semiconductor quantum well in electric field," IEEE J. Quantum Electron., vol. 25, pp. 54-60, 1989.
3. M. M. Fejer, S. J. B. Yoo, R. L. Byer, A. Harwit, and J. S. Harris, Jr., "Observation of extremely large quadratic susceptibility at 9.6-10.8 μm in electric-field biased AlGaAs quantum wells," Phys. Rev. Lett., vol. 62, pp. 1041-1044, 1989.
4. J. Khurgin, "Second-order intersubband nonlinear-optical susceptibilities of asymmetric quantum-well structures," J. Opt. Soc. Amer. B, vol. 6, pp. 1673-1682, 1989.
5. P. Boucaud, F. H. Julien, D. D. Yang, J.-M. Lourtioz, E. Rosencher, P. Bois, and J. Nagle, "Detailed analysis of second-harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wells," Appl. Phys. Lett., vol. 57, pp. 215-217, 1990.
6. P. Boucaud and F. H. Julien, "Génération de second-harmonique dans les puits quantiques asymétriques GaAs/AlGaAs," J. Phys. III, vol. 1, pp. 13-28, 1991.
7. E. Rosencher and P. Bois, "Model systems for optical nonlinearities: Asymmetric quantum wells," Phys. Rev. B, vol. 44, pp. 11315-11327, 1991.
8. E. Rosencher, "Two-photon optical nonlinearities in a resonant quantum well system," J. Appl. Phys., vol. 73, pp. 1909-1911, 1993.
9. C. Sirtori, F. Capasso, D. L. Sivco, S. N. G. Chu, and A. Y. Cho, "Observation of large second order susceptibility via intersubband transitions at λ = 10 μm in asymmetric coupled AIInAs/GaInAs quantum wells,λ Appl. Phys. Lett., vol. 59, pp. 2302-2304, 1991.
10. L. C. Lew Yan Voon and L. R. Ram-Mohan, λCalculation of second-order nonlinear optical susceptibility in III-V and II-VI semiconductor heterostructures,λ Phys. Rev. B, vol. 50, pp. 14421-14434, 1994.
11. T. A. DeTemple, L. A. Bahler, and J. Osmundsen, "Semiclassical theory of resonant three-wave parametric interactions: Second-harmonic generation," Phys. Rev. A, vol. 24, pp. 1950-1964, 1981.
12. F. Capasso, C. Sirtori, and A. Y. Cho, "Coupled quantum well semiconductors with giant electric field tunable nonlinear optical properties in the infrared," IEEE J. Quantum Electron., vol. 30, pp. 1313-1326, 1994.
13. G. Almogy and A. Yariv, "Second-harmonic generation in absorptive media," Opt. Lett., vol. 19, pp. 1828-1830, 1994.
14. _, "Resonantly-enhanced nonlinear optics of intersubband transitions," J. Nonlin. Opt. Phys. Mater., vol. 4, pp. 401-458, 1995.
15. Z. Chen, M. Li, D. Cui, H. Lu, and G. Yang, "Surface-emitting second-harmonic generator by intersubband transition in asymmetric quantum wells with slab waveguide," Appl. Phys. Lett., vol. 62, pp. 1502-1503, 1993.
16. Y. R. Shen, The Principles of Nonlinear Optics. New York: Wiley, 1984.
17. P. Boucaud, F, H. Julien, D. D. Yang, J.-M. Lourtioz, E. Rosencher, and P. Bois, "Saturation of second-harmonic generation in GaAs-AlGaAs asymmetric quantum wells," Opt. Lett., vol. 16, pp. 199-201, 1991.
18. L. C. West and S. J. Eglash, "First observation of an extremely large dipole infrared transition within the conduction band of a GaAs quantum well," Appl. Phys. Lett., vol. 46, pp. 1156-1158, 1985.
19. A. Yariv, Quantum Electronics, 2nd ed. New York: Wiley, 1975, ch. 16.
20. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, E. R. Youngdale, and L. R. Ram-Mohan, "Momentum-space reservoir for enhancement of intersubband second-harmonic generation," IEEE J. Quantum Electron., vol. 31, pp. 706-714, 1995.
21. D. A. Holm and H. F. Taylor, "Infrared phase modulators with multiple quantum wells," IEEE J. Quantum Electron., vol. 25, pp. 2266-2271, 1989.
22. G. I. Stegeman and C. T. Seaton, "Nonlinear integrated optics," J. Appl. Phys., vol. 58, pp. R57-R78, 1985.
23. P. J. Price, "Two-dimensional electron transport in semiconductor layers. I. Phonon Scattering," Annu. Phys., vol. 133, pp. 217-239, 1981.
24. 0.53As multiple-quantum-well structure," Phys. Rev. B, vol. 38, pp. 4307-4310, 1988.
25. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, A. L. Hutchinson, S. N. G. Chu, and A. Y. Cho, "Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption," Appl. Phys. Lett., vol. 63, pp. 1354-1356, 1993.
26. P. F. Yuh and K. L. Wang, "Optical transitions in a step quantum well," J. Appl. Phys., vol. 65, pp. 4377-4381, 1989.
27. Z. Chen, D. Cui, M. Li, C. Jiang, J. Zhou, and G. Yang, "High conversion efficiency of second-harmonic generation in step quantum wells," Appl. Phys. Lett., vol. 61, pp. 2401-2403, 1992.
28. G. Almogy, M. Segev, and A. Yariv, "Intersubband-transition-induced phase matching," Opt. Lett., vol. 19, pp. 1192-1194, 1994.
29. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram-Mohan, "Intersubband second-harmonic generation with voltage-controlled phase matching," Appl. Phys. Lett., vol. 66, pp. 608-610, 1995.
30. P. von Allmen, M. Berz, G. Petrocelli, F.-K. Reinhart, and G. Harbeke, "Inter-subband absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperature," Semiconduct. Sci. Technol., vol. 3, pp. 1211-1216, 1988.
31. F. Muller, V. Petrova-Koch, M. Zachau, F. Koch, D. Grutzmacher, R. Meyer, H. Jurgensen, and P. Balk, "Resonance spectroscopy of InGaAs/InP quantum well sub-bands," Semiconduct. Sci. Technol., vol. 3, pp. 797-801, 1988.
32. H. Asai and Y. Kawamura, "Temperature dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells," J. Appl. Phys., vol. 68, pp. 5890-5892, 1990.
33. M. Zaluzny, "Intersubband absorption line broadening in semiconductor quantum wells: Nonparabolicity contribution," Phys. Rev. B, vol. 43, pp. 4511-4514, 1991.
34. C. Sirtori, private communication.
35. 1-xAs: Material parameters for use in research and device applications," J. Appl. Phys., vol. 58, pp. R1-R29, 1984.
36. 1-xAs," Appl. Phys. Lett., vol. 51, pp. 605-607, 1987.
37. O. E. Raichev, "Phonon assisted Γ-X transfer in (001)-grown GaAs/AlAs superlattices," Phys. Rev. B, vol. 49, pp. 5448-5462, 1994.
38. L. R. Ram-Mohan and J. R. Meyer, "Multiband finite element modeling of wavefunction-engineered electro-optical devices," J. Nonlin. Opt. Phys. Mat., vol. 4, pp. 191-243, 1995.
39. M. M. Fejer, G. A. Magel, D. H. Jundt, and R. L. Byer, "Quasiphase-matched second harmonic generation: Tuning and tolerances," IEEE J. Quantum Electron., vol. 28, pp. 2631-2654, 1992.
40. C. G. Treviño-Palacios, G. I. Stegeman, M. P. De Micheli, P. Baldi, S. Nouh, D. B. Ostrowsky, D. Delacourt, and M. Papuchon, "Intensity dependent mode competition in second harmonic generation in multimode waveguides," Appl. Phys. Lett., vol. 67, pp. 170-172, 1995.
41. D. J. Erskine, A. J. Taylor, and C. L. Tang, "Femtosecond studies of intraband relaxatio in GaAs, AlGaAs, and GaAs/AlGaAs quantum well structures," Appl. Phys. Lett., vol. 45, pp. 54-56, 1984.
42. W.-Z. Lin, R. W. Shoenlein, J. G. Fujimoto, and E. P. Ippen, "Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs," IEEE J. Quantum Electron., vol. 24, pp. 267-275, 1988.
43. P. C. Becker, H. L. Fragnito, C. H. Brito Cruz, J. Shah, R. L. Fork, J. E. Cunningham, J. E. Henry, and C. V. Shank, "Femotsecond intervalley scattering in GaAs," Appl. Phys. Lett., vol. 53, pp. 2089-2090, 1988.
44. W. Hackenberg and G. Fasol, "Determination of the LO-phonon and Γ → L intervalley scattering time in GaAs from hot electron luminescence spectroscopy," Solid State Electron., vol. 32, pp. 1247-1251, 1989.
45. L. A. Samoska, B. Brar, and H. Kroemer, "Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices," Appl. Phys. Lett., vol. 52, pp. 2539-2541, 1993.
46. J. Feldmann, J. Nunnenkamp, G. Peter, E. Gobel, J. Kuhl, K. Ploog, P. Dawson, and C. T. Foxon, "Experimental study of the Γ-X electron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structures," Phys. Rev. B, vol. 42, pp. 5809, 1990.
47. G. R. Olbright, W. S. Fu, J. F. Klem, H. M. Gibbs, G. Khitrova, R. Pon, B. Fluegel, K. Meissnen, N. Peyghambarian, R. Binder, I. Galbraith, and S. W. Koch, "Nonlinear optical properties of type-II quantum wells," Phys. Rev. B, vol. 44, pp. 3043, 1991.