A study of hydrogen doped semiconductors using the INDO method

Solid State Communications

Volumn 99, Issue 8, 1996, Pages 583-588

  Stashans, Arvids ^a,b   Kitamura, Michihide ^b  

^a UNIVERSITY OF LATVIA   (Latvia)

^b UTSUNOMIYA UNIVERSITY   (Japan)

Author keywords

C. impurities in semiconductors; C. point defects

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; CRYSTAL IMPURITIES; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS;

LARGE UNIT CELL METHOD; MOLECULAR ORBITAL THEORY;

HYDROGEN;

EID: 0030216844     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00165-2     Document Type: Article

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