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Volumn 99, Issue 8, 1996, Pages 583-588
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A study of hydrogen doped semiconductors using the INDO method
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Author keywords
C. impurities in semiconductors; C. point defects
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Indexed keywords
CARRIER CONCENTRATION;
CHARGE TRANSFER;
CRYSTAL IMPURITIES;
POINT DEFECTS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR MATERIALS;
LARGE UNIT CELL METHOD;
MOLECULAR ORBITAL THEORY;
HYDROGEN;
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EID: 0030216844
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1098(96)00165-2 Document Type: Article |
Times cited : (32)
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References (27)
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