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Volumn 99, Issue 8, 1996, Pages 583-588

A study of hydrogen doped semiconductors using the INDO method

Author keywords

C. impurities in semiconductors; C. point defects

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; CRYSTAL IMPURITIES; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS;

EID: 0030216844     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00165-2     Document Type: Article
Times cited : (32)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.