High-resolution transmission electron microscopy of AlAs - GaAs semiconductor superlattices

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 4, 1996, Pages 285-295

  Ikarashi, N ^a   Ishida, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM ARSENIDE; INTERFACE SMOOTHING; ION MILLING;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030216805     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00188957     Document Type: Article

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