Focused ion beam sputtering yield measurements for cobalt ions on silicon and related materials

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 117, Issue 1-2, 1996, Pages 77-80

  Schneider, P ^a   Bischoff, L ^a   Teichert, J ^a   Hesse, E ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COBALT; CRYSTALLINE MATERIALS; ION BOMBARDMENT; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON CARBIDE; SPUTTERING; SUBSTRATES; SURFACE STRUCTURE; TARGETS; THERMAL EFFECTS;

COBALT IONS; FOCUSED ION BEAM SPUTTERING; POLY SILICON; SPUTTERED HOLES; VOLUME LOSS METHOD;

ION BEAMS;

EID: 0030216695     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00273-X     Document Type: Article

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