Measurement and control of a residual oxide layer on TiSi2 films employed in ohmic contact structures

IEEE Transactions on Semiconductor Manufacturing

Volumn 9, Issue 3, 1996, Pages 329-333

  Yu, Z ^a,b   Nikkel, P ^c   Hathcock, S ^a,c   Lu, Z ^d   Shaw, D M ^b   Anderson, M E ^c   Collins, G J ^a,b  

^a IEEE

^b Engineering Research Center and Hydraulics Laboratory   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

^d Communication Semiconductor Products Division ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CURRENTS; ELLIPSOMETRY; GATES (TRANSISTOR); OHMIC CONTACTS; OXIDATION; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THICKNESS MEASUREMENT; TITANIUM COMPOUNDS;

FILM THICKNESS; MULTIWAVELENGTH SPECTROSCOPIC ELLIPSOMETRY; OHMIC CONTACT STRUCTURES; OXIDE LAYERS; POLYSILICON GATE SHUNTS; STANDBY CURRENTS; TITANIUM DISILICIDE FILM;

SEMICONDUCTING FILMS;

EID: 0030216530     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.536106     Document Type: Article

References (11)

1. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, Volume 1: Process Technology. Sunset Beach, CA: Lattice, 1986, ch. 11.
2. A. K. Sinha, "Refractory metal silicides for VLSI applications," J. Vac. Sci. Technol., vol. 19, p. 778, 1981.
3. S. Murarka, D. Fraser, A. Sinha, and H. Levinstein, "Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects," IEEE Trans. Electron Devices, vol. ED-27, pp. 1409-1417, 1980.
4. S. Murarka and D. Fraser, "Thin film interaction between titanium and polycrystalline silicon," J. Appl. Phys., vol. 51, pp. 342-349, 1980.
5. Z. Yu, "The electron beam plasma and its applications to microelectronics," Ph.D. dissertation, Colorado State University, 1990, ch. 3.3.
6. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light. Amsterdam: North-Holland, 1989.
7. H. Arwin and D. E. Aspnes, "Unambiguous determination of thickness and dielectric function of thin films by spectroscopic ellipsometry," Thin Solid Films, vol. 113, p. 101, 1984.
8. D. E. Aspnes, in Handbook of Optical Constants of Solids, E. D. Palik, Ed. New York: Academic, 1985, p. 89.
9. G. H. Bu-abbud, N. Bashara, and J. A. Woollam, "Variable wavelength, variable angle ellipsometry including a sensitivities correlation test," Thin Solid Films, vol. 138, pp. 27-41, 1986.
10. H. Yao and J. A. Woollam, "Spectroscopic ellipsometry studies of hf treated si (100) surfaces," Appl. Phys. Lett., vol. 62, pp. 3324-3326, 1993.
11. M. Itano, F. W. Kern, M. Miyashita, and T. Ohmi, "Particle removal from silicon wafer surface in wet cleaning process," IEEE Trans. Semiconduct. Manufact., vol. 6, pp. 258-267, 1993.