-
1
-
-
0027646250
-
Ambient temperature effects on the dc behavior of GaAs MESFET devices
-
Aug.
-
J. Rodriguez Tellez and B. P. Stothard, "Ambient temperature effects on the dc behavior of GaAs MESFET devices,"IEE Proc. Pi. G., vol. 140, no. 4, pp. 305-310, Aug. 1993.
-
(1993)
IEE Proc. Pi. G.
, vol.140
, Issue.4
, pp. 305-310
-
-
Rodriguez Tellez, J.1
Stothard, B.P.2
-
2
-
-
0027678030
-
Simulation of temperature and bias dependencies of ff and VTO of GaAs MESFET devices
-
Oa.
-
"Simulation of temperature and bias dependencies of ff and VTO of GaAs MESFET devices," IEEE Trans. Electron Devices, vol. 40, pp. 1730-1735, Oa. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 1730-1735
-
-
-
3
-
-
0027237999
-
A new nonlinear dc and temperature GaAs MESFET model
-
IL, May 1993
-
"A new nonlinear dc and temperature GaAs MESFET model,"in Proc. IEEE Int. Symp. Circuits Syst., Chicago, IL, May 1993, pp. 1112-1115.
-
Proc. IEEE Int. Symp. Circuits Syst., Chicago
, pp. 1112-1115
-
-
-
4
-
-
0019020915
-
A MESFET model for use in the design of GaAs integrated circuits
-
May
-
W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits,"IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 448.56, May 1980.
-
(1980)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-28
, pp. 44856
-
-
Curtice, W.R.1
-
5
-
-
0026896254
-
High temperature electrical characteristics of GaAs MESFET's (25-400 °C)
-
July
-
F. S. Shoucair and P. K. Ojala, "High temperature electrical characteristics of GaAs MESFET's (25-400 °C),"IEEE Trans. Electron Devices, vol. 9, pp. 1551-1557, July 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.9
, pp. 1551-1557
-
-
Shoucair, F.S.1
Ojala, P.K.2
-
6
-
-
0027539642
-
Modeling temperature effects of dc IV characteristics of GaAs MESFET devices
-
Oct.
-
L. Sclmi and B. Ricco, "Modeling temperature effects of dc IV characteristics of GaAs MESFET devices,"IEEE Trans. Electron Devices, vol. 40, pp. 273-277, Oct. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 273-277
-
-
Sclmi, L.1
Ricco, B.2
-
7
-
-
33747928766
-
-
Electrical Engineering Software, Inc., Santa Clara, CA
-
Precise Simulator Manual, Electrical Engineering Software, Inc., Santa Clara, CA, 1991.
-
(1991)
Precise Simulator Manual
-
-
-
8
-
-
33748007962
-
-
Spiral Software, Brookline, MA
-
S Karon, Easyplot Manual, Spiral Software, Brookline, MA, 1992.
-
(1992)
Easyplot Manual
-
-
Karon, S.1
-
9
-
-
0003147674
-
Self-heating in GaAs FETs-A problem?
-
Sept.
-
J. Rodriguez Tellez. S. Loredo, and R. W. Clarke, "Self-heating in GaAs FETs-A problem?,"Microwave J., vol. 37, no. 9, pp. 76-92, Sept. 1994.
-
(1994)
Microwave J.
, vol.37
, Issue.9
, pp. 76-92
-
-
Rodriguez Tellez, J.1
Loredo, S.2
Clarke, R.W.3
-
10
-
-
0029357211
-
The effect of frequency and temperature on output conductance of GaAs FETs
-
Aug.
-
J. Rodriguez Tellez, HP Stothard, and M. Al-Daas, "The effect of frequency and temperature on output conductance of GaAs FETs,"Microwave J., vol. 38, no. 8, pp. 88-94, Aug. 1995.
-
(1995)
Microwave J.
, vol.38
, Issue.8
, pp. 88-94
-
-
Rodriguez Tellez, J.1
Stothard, H.P.2
Al-Daas, M.3
-
11
-
-
0028397505
-
Comparison of nonlinear MESFET models for wideband circuit design
-
Mar.
-
J. Rodriguez Tellez, M. Al-Daas, and K. A. Mezher, "Comparison of nonlinear MESFET models for wideband circuit design,"IEEE Trans. Electron Devices, vol. 41, pp. 288-293, Mar. 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 288-293
-
-
Rodriguez Tellez, J.1
Al-Daas, M.2
Mezher, K.A.3
-
13
-
-
33747999700
-
Effect of scalability on nonlinear MESFET model accuracy
-
Cannes, France, Sept.
-
J. Rodriguez Tellez and K. A. Mezher, "Effect of scalability on nonlinear MESFET model accuracy,"in Proc. 24th Euro. Microwave Conf., Cannes, France, Sept. 1994, pp. 1632-1637.
-
(1994)
Proc. 24th Euro. Microwave Conf.
, pp. 1632-1637
-
-
Rodriguez Tellez, J.1
Mezher, K.A.2
|