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Volumn 15, Issue 8, 1996, Pages 968-976

Comparison of temperature models for the drain current of mesfet's

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; TRANSCONDUCTANCE;

EID: 0030216462     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.511576     Document Type: Article
Times cited : (4)

References (13)
  • 1
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    • Ambient temperature effects on the dc behavior of GaAs MESFET devices
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    • J. Rodriguez Tellez and B. P. Stothard, "Ambient temperature effects on the dc behavior of GaAs MESFET devices,"IEE Proc. Pi. G., vol. 140, no. 4, pp. 305-310, Aug. 1993.
    • (1993) IEE Proc. Pi. G. , vol.140 , Issue.4 , pp. 305-310
    • Rodriguez Tellez, J.1    Stothard, B.P.2
  • 2
    • 0027678030 scopus 로고
    • Simulation of temperature and bias dependencies of ff and VTO of GaAs MESFET devices
    • Oa.
    • "Simulation of temperature and bias dependencies of ff and VTO of GaAs MESFET devices," IEEE Trans. Electron Devices, vol. 40, pp. 1730-1735, Oa. 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1730-1735
  • 3
    • 0027237999 scopus 로고    scopus 로고
    • A new nonlinear dc and temperature GaAs MESFET model
    • IL, May 1993
    • "A new nonlinear dc and temperature GaAs MESFET model,"in Proc. IEEE Int. Symp. Circuits Syst., Chicago, IL, May 1993, pp. 1112-1115.
    • Proc. IEEE Int. Symp. Circuits Syst., Chicago , pp. 1112-1115
  • 4
    • 0019020915 scopus 로고
    • A MESFET model for use in the design of GaAs integrated circuits
    • May
    • W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits,"IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 448.56, May 1980.
    • (1980) IEEE Trans. Microwave Theory Tech. , vol.MTT-28 , pp. 44856
    • Curtice, W.R.1
  • 5
    • 0026896254 scopus 로고
    • High temperature electrical characteristics of GaAs MESFET's (25-400 °C)
    • July
    • F. S. Shoucair and P. K. Ojala, "High temperature electrical characteristics of GaAs MESFET's (25-400 °C),"IEEE Trans. Electron Devices, vol. 9, pp. 1551-1557, July 1992.
    • (1992) IEEE Trans. Electron Devices , vol.9 , pp. 1551-1557
    • Shoucair, F.S.1    Ojala, P.K.2
  • 6
    • 0027539642 scopus 로고
    • Modeling temperature effects of dc IV characteristics of GaAs MESFET devices
    • Oct.
    • L. Sclmi and B. Ricco, "Modeling temperature effects of dc IV characteristics of GaAs MESFET devices,"IEEE Trans. Electron Devices, vol. 40, pp. 273-277, Oct. 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 273-277
    • Sclmi, L.1    Ricco, B.2
  • 7
    • 33747928766 scopus 로고
    • Electrical Engineering Software, Inc., Santa Clara, CA
    • Precise Simulator Manual, Electrical Engineering Software, Inc., Santa Clara, CA, 1991.
    • (1991) Precise Simulator Manual
  • 8
    • 33748007962 scopus 로고
    • Spiral Software, Brookline, MA
    • S Karon, Easyplot Manual, Spiral Software, Brookline, MA, 1992.
    • (1992) Easyplot Manual
    • Karon, S.1
  • 9
    • 0003147674 scopus 로고
    • Self-heating in GaAs FETs-A problem?
    • Sept.
    • J. Rodriguez Tellez. S. Loredo, and R. W. Clarke, "Self-heating in GaAs FETs-A problem?,"Microwave J., vol. 37, no. 9, pp. 76-92, Sept. 1994.
    • (1994) Microwave J. , vol.37 , Issue.9 , pp. 76-92
    • Rodriguez Tellez, J.1    Loredo, S.2    Clarke, R.W.3
  • 10
    • 0029357211 scopus 로고
    • The effect of frequency and temperature on output conductance of GaAs FETs
    • Aug.
    • J. Rodriguez Tellez, HP Stothard, and M. Al-Daas, "The effect of frequency and temperature on output conductance of GaAs FETs,"Microwave J., vol. 38, no. 8, pp. 88-94, Aug. 1995.
    • (1995) Microwave J. , vol.38 , Issue.8 , pp. 88-94
    • Rodriguez Tellez, J.1    Stothard, H.P.2    Al-Daas, M.3
  • 11
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    • Comparison of nonlinear MESFET models for wideband circuit design
    • Mar.
    • J. Rodriguez Tellez, M. Al-Daas, and K. A. Mezher, "Comparison of nonlinear MESFET models for wideband circuit design,"IEEE Trans. Electron Devices, vol. 41, pp. 288-293, Mar. 1994.
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  • 13
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    • Effect of scalability on nonlinear MESFET model accuracy
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    • J. Rodriguez Tellez and K. A. Mezher, "Effect of scalability on nonlinear MESFET model accuracy,"in Proc. 24th Euro. Microwave Conf., Cannes, France, Sept. 1994, pp. 1632-1637.
    • (1994) Proc. 24th Euro. Microwave Conf. , pp. 1632-1637
    • Rodriguez Tellez, J.1    Mezher, K.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.