Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configuration

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 475-478

  Dubecky F ^a   Darmo, J ^a   Hlavac S ^b   Benovic M ^b   Pikna, M ^c   Pelfer, P G ^d   Forster A ^e   Kordos P ^e  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INSTITUTE OF PHYSICS   (Slovakia)

^c Physics and Informatics   (Slovakia)

^d UNIVERSITY OF FLORENCE   (Italy)

^e FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EFFICIENCY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON SENSORS;

BIAS VOLTAGE; DETECTION PROPERTIES; FULL WIDTH AT HALF MAXIMUM; GOLD-GOLD CONTACTS; LIQUID ENCAPSULATED CZOCHRALSKI; SILICON GALLIUM ARSENIDE RADIATION DETECTORS; SYMMETRICAL CONTACT CONFIGURATION;

RADIATION DETECTORS;

EID: 0030215818     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01455-1     Document Type: Article

References (7)

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3. J. Darmo, F. Dubecký and P.G. Pelfer, presented at this Conference (7th Europ. Symp. on Semiconductor Detectors, Schloss Elmau, Bavaria, Germany, 1995).
4. J. Betko, private information.
5. F. Dubecký, J. Dramo, P.G. Pelfer, P. Kordoš and A. Förster, Patent application (1995).
6. S. Hlaváč, et al., to be published.
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