Surface electronic structures and photoluminescence mechanisms of porous Si

Journal of the Electrochemical Society

Volumn 143, Issue 8, 1996, Pages 2502-2507

  Suda, Yoshiyuki ^a   Koizumi, Tomohiro ^a   Obata, Koji ^a   Tezuka, Yasuhisa ^b   Shin, Shik ^b   Koshida, Nobuyoshi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; ELECTRIC CURRENTS; ELECTRONIC STRUCTURE; HYDRIDES; OXYGEN; PHOTOEMISSION; PHOTOLUMINESCENCE; SPECTROSCOPY; SURFACE STRUCTURE; SYNCHROTRON RADIATION;

ANODIZATION CURRENT; ELECTRONIC TRANSITION LEVELS; EXCITON ENERGY; OXYGEN TERMINATION;

POROUS SILICON;

EID: 0030214855     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837038     Document Type: Article

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