Fabrication of large-area CCD detectors on high-purity, float-zone silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 325-333

  Gregory, J A ^a   Burke, B E ^a   Cooper, M J ^a   Mountain, R W ^a   Kosicki, B B ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CHARGE TRANSFER INEFFICIENCY; FORMATION OF DISLOCATION; TRAPPING PARAMETER;

PARTICLE DETECTORS;

EID: 0030214056     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01406-3     Document Type: Article

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