Fabrication and analysis of record high 18.2% efficient solar cells on multicrystalline silicon material

IEEE Electron Device Letters

Volumn 17, Issue 8, 1996, Pages 401-403

  Rohatgi, A ^a,b   Narasimha, S ^b   Kamra, S ^b   Khattak, C P ^c  

^a IEEE

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Crystal Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DIFFUSION; FABRICATION; HEAT EXCHANGERS; PHOTOCONDUCTIVITY; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SOLIDIFICATION;

BACK SURFACE RECOMBINATION VELOCITY; HEAT EXCHANGER METHOD; INTERNAL QUANTUM EFFICIENCY; MULTICRYSTALLINE SILICON; PHOTOCONDUCTIVE DECAY; PHOTOCONDUCTIVE DECAY MEASUREMENTS;

SILICON SOLAR CELLS;

EID: 0030213883     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.511588     Document Type: Article

References (6)

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3. K. A. Dumas, C. P. Khattak and F. Schmid, "Characterization of HEM silicon for solar cells," in Proc. 15th IEEE Photovoltaic Specialists Conf., 1981, pp. 954-956.
4. S. Narayanan, S. R. Wenham, and M. A. Green. "17.8% efficiency polycrystalline silicon solar cells." IEEE Trans. Electron Devices, vol. 37, pp. 382-384, 1990.
5. P. Sana, J. Salami, and A. Robatgi. "Fabrication and analysis of high-efficiency polycrystalline silicon solar cells." IEEE Trans. Electron Devices, vol. 40, pp. 1461-1468, 1993.
6. P. A. Basote, D. T. Rover, and A. W. Smith. "PC-ID version 2: Enhanced numerical solar cell modeling," in Proc. 20th IEEE Photovoltaic Specialists Conf., 1988, pp. 389-396.