Measurement of shallow dopant impurity profile in silicon using anodic sectioning and lange method of hall measurement

Solar Energy Materials and Solar Cells

Volumn 43, Issue 1, 1996, Pages 15-20

  Basu, P K ^a   Chakravarty, B C ^a   Singh, S N ^a   Dutta, P ^b   Kesavan, R ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

Anodic oxidation; Dopant profile; Hall voltage; Spreading resistance

Indexed keywords

ANODIC OXIDATION; DOPING (ADDITIVES); HALL EFFECT; IMPURITIES; MEASUREMENTS;

IMPURITY PROFILE MEASUREMENT;

SILICON;

EID: 0030212596     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(95)00152-2     Document Type: Article

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