Low-threshold piezoelectric-strained InGaAs-GaAs QW lasers grown on (211)B oriented GaAs substrates

IEEE Photonics Technology Letters

Volumn 8, Issue 8, 1996, Pages 983-985

  Sale, T E ^a,b,c   Roberts, J S ^b   Whitbread, N D ^b   Robson, P N ^a,b  

^a IEEE

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSPARENCY;

PIEZOELECTRIC STRAINED LASERS; SEPARATE CONFINEMENT HETEROSTRUCTURE; THRESHOLD CURRENT DENSITY; WAVEGUIDE TRANSPARENCY;

QUANTUM WELL LASERS;

EID: 0030211965     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.508711     Document Type: Article

References (10)

1. C. Mailhiot and D.L.Smith, "Modulation of internal piezoelectric fields in strained-layer superlattices grown along the [111] direction," J. Vac. Sci. Technol. A, vol. 7, pp. 609-615, 1989.
2. R. A. Hogg, T. A. F isher, A. R. K. Wilcox, D. M. Whittaker, M. S. Skolnick, D. M. Mowbray, J. P. R. David, A. S. Pabla, G. J.Rees, R. Grey, J. Woodhead, J. L. Sanchez-Rojas, G. Hill, M. A. Pate, and P. N. Robson, "Piezoelectric-field effects on transition energies, oscillator strengths and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells," Phys. Rev. B., vol. 48, pp. 8491-8494, 1993.
3. G. P. Agrawal and N. K. Dutta, Long-Wavelength Semiconductor Lasers. New York: Van Nostrand Reinholt, 1986.
4. O. Madelung, Ed., Landölt-Bornstein, Numerical Data and Function-ships in Science and Technology (New Series III: Crystal and Solid State Physics). Berlin: Springer, 1982, vol. 17a.
5. W. Batty, U. Ekenberg, A. Ghiti, E. P. O'Reilly, "Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wells," Semicond. Sci. Technol., vol. 4, pp. 904-909, 1989.
6. T. Hayakawa, T. Suematsu, K. Takahashi, M. Kondo, S. Yamamoto, and T. Hijikata, "Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers," Appl. Phys. Lett., vol. 52, pp. 339-341, 1988.
7. T. Hayakawa, T. Suyama, T. Takahashi, M. Kondo, S. Yamaoto, and T.Hijikata, "Polarization-dependant gain-relationship in (111)-orientated GaAs/AlGaAs quantum-well lasers," J. Appl. Phys., vol. 1, pp. 297-302, 1988.
8. N. D. Whitbread, J. S. Roberts, P. N. Robson, and M. A. Pate, "Green second-harmonic surface emission from (211)B GaAs/AlGaAs waveguides," Electron. Lett., vol. 29, pp. 2106-2107, 1993.
9. D. Sun and E. Towe, "Operation of strained-layer (In,Ga)As quantum well lasers prepared on (112)B GaAs substrate," Electron. Lett., vol. 30, pp. 497-499, 1994.
10. T. E. Sale, J. Woodhead, G. J. Rees, R. Grey, J. P. R. David, A. S. Pabla, P. J. Rodriguez-Gíronés, P. N. Robson, R. A. Hogg, and M. S. Skolnick, "Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111]B axis," J. Appl. Phys., vol. 76, pp. 5447-5452, 1994.