Annealing effects of As+-implanted CdTe epilayers

Journal of Physics D: Applied Physics

Volumn 29, Issue 8, 1996, Pages 2162-2164

  Zhang, J M ^a,c   Shen, S C ^a   Quo, S P ^b   Yuan, S X ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; ELECTRON EMISSION; EXCITONS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

BACKSCATTERING GEOMETRY; BEAM CURRENT DENSITY; EPITAXIAL LAYERS; LATTICE MISMATCH; LATTICE PERFECTION; RAMAN INTENSITY RATIO;

METALLIC FILMS;

EID: 0030211544     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/8/015     Document Type: Article

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