Growth dynamics and an order-disorder transition in epitaxial alloy semiconductors

Surface Science

Volumn 363, Issue 1-3, 1996, Pages 409-415

  Nakayama, Hiroshi ^a   Takeguchi, Tohru ^a   Nishino, Taneo ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

Adsorption kinetics; Computer simulations; Diffusion and migration; Epitaxy; Ising models; Models of surface kinetics

Indexed keywords

ADSORPTION; ALLOYS; COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; DIFFUSION; EPITAXIAL GROWTH; KINETIC THEORY; MATHEMATICAL MODELS; MONTE CARLO METHODS; ORDER DISORDER TRANSITIONS; RANDOM PROCESSES; TEMPERATURE;

ADSORPTION KINETICS; ATOM CORRELATION; DIFFUSION AND MIGRATION; EPITAXIAL ALLOY SEMICONDUCTORS; ISING MODELS; STOCHASTIC DIFFERENTIAL EQUATION; SURFACE KINETICS;

SEMICONDUCTOR MATERIALS;

EID: 0030206527     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00169-0     Document Type: Article

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