Field-effect studies of C60 thin films before and after implantation with potassium

Synthetic Metals

Volumn 81, Issue 2-3, 1996, Pages 259-263

  Trouillas, P ^a   Ratier, B ^a   Moliton, A ^a   Pichler, K ^b,c   Friend, R H ^b  

^a UNIVERSITY OF LIMOGES   (France)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Cambridge Display Technology Ltd   (United Kingdom)

Author keywords

Field effect; Films; Fullerene; Implantation; Potassium

Indexed keywords

DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRONS; ION IMPLANTATION; OXIDES; POTASSIUM; SILICON WAFERS; SUBLIMATION; THIN FILMS;

FIELD EFFECT MOBILITIES; MOLECULAR SEMICONDUCTORS; VACUUM SUBLIMATION;

FULLERENES;

EID: 0030206492     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(96)03749-6     Document Type: Article

References (29)

1. K. Pichler, M.G. Harrison, R.H. Friend and S. Pekker, Synth. Met., 55-57 (1993) 3229.
2. J. Paloheimo, H. Isotalo, J. Kastner and H. Kusmany, Synth. Met., 55-57 (1993) 3185.
3. K. Hoshimoto, S. Fujimori, S. Fujita and S. Fujita, Jpn. J. Appl. Phys., 32 (1993) L1070.
4. C.P. Jarrett, K. Pichler, R. Newbould and R.H. Friend, Synth. Met., 77 (1995) 35.
5. S. Morita, A.A. Zakhidov and K. Yoshino, Solid State Commun., 82 (1992) 249.
6. N.S. Sariciftci, L. Smilowitz, A.J. Heeger and F. Wudl, Science, 258 (1992) 1474.
7. N.S. Sariciftci, D. Braun, C. Zhang, V.I. Srdanov, A.J. Heeger, G. Stucky and F. Wudl, Appl. Phys. Lett., 62 (1993) 585.
8. J.J.M. Halls, K. Pichler, R.H. Friend, S.C. Moratti and A.B. Holmes, Synth. Met., 77 (1995) 277.
9. R.C. Haddon, A.S. Perel, R.C. Morris, T.T.M. Palstra and A.F. Hebard, Appl. Phys. Lett., 67 (1995) 121.
10. E. Frankevich, Y. Maruyama and H. Ogata, Chem. Phys. Lett., 214 (1993) 39.
11. R.C. Haddon, A.F. Hebard, M.J. Rosseinsky, D.W. Murphy, S.J. Duclos, K.B. Lyons, B. Miller, J.M. Rosamilia, R.M. Fleming, A.R. Kortan, S.H. Glarum, A.V. Makhija, A.J. Muller, R.H. Eick, S.M. Zahurak, R. Tycko, G. Dabbagh and F.A. Thiel, Nature, 350 (1991) 320.
12. A.F. Hebard, M.J. Rosseinsky, R.C. Haddon, D.W. Murphy, S.H. Glarum, T.T.M. Palstra, A.P. Ramirez and A.R. Kortan, Nature, 350 (1991) 600.
13. P. Trouillas, B. Ratier, A. Moliton, M. Gauneau and P. Bernier, Philos. Mag. B, 70 (1994) 893.
14. P. Trouillas, B. Ratier and A. Moliton, Radiat. Eff. Defects Solids, 137 (1995) 1349.
15. P. Trouillas, A. Moliton and B. Ratier, Synth. Met., 73 (1995) 145.
16. P. Trouillas, B. Ratier, A. Moliton and J.L. Duroux, Sci. Technol. Fullerene, in press.
17. J. Kastner, H. Kusmany, L. Palmetshofer and P. Bauer, Nucl. Instrum. Methods, Sect. B, 80-81 (1993) 1456.
18. R. Kalish, A. Samoiloff, A. Hoffman and C. Uzan-Saguy, Phys. Rev. B, 48 (1993) 18235.
19. K. Pichler, C.P. Jarrett, R.H. Friend, B. Ratier and A. Moliton, J. Appl. Phys., 77 (1995) 3523.
20. S.M. Sze, The Physics of Semiconductor Devices, Wiley, New York, 1969.
21. R. Madru, G. Guillaud, M.A. Sadoun, M. Maitrot, J.J. André, C. Clarisse, M.L. Contellec and J. Simon, Chem. Phys. Lett., 142 (1987) 103.
22. R. Madru, G. Guillaud, M.A. Sadoun, M. Maitrot, J.J. André, J. Simon and R. Even, Chem. Phys. Lett., 145 (1988) 343.
23. F. Garnier, R. Hajlaoui, A. Yassar and P. Srivastava, Science, 265 (1994) 1684.
24. H. Koezuka, A. Tsumara and T. Ando, Synth. Met., 18 (1987) 699.
25. J.H. Burroughes, C.A. Jones and R.H. Friend, Nature, 335 (1988) 137.
26. A. Assadi, C. Svensson, M. Willander and O. Inganäs, Appl. Phys. Lett., 53 (1988) 195.
27. H. Fuchigami, A. Tsumura and H. Koezuka, Appl. Phys. Lett., 63 (1993) 1372.
28. A.R. Brown, D.M. de Leeuw, E.E. Havinga and A. Pomp, Synth. Met., 68 (1994) 71.
29. C.P. Jarrett, A.R. Brown, R.H. Friend and D.M. de Leeuw, J. Appl. Phys., 77 (1995) 6289.