GaSb-growth study by realtime crystal-growth analysis system using synchrotron radiation photoelectron spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4457-4462

  Maeda, Fumihiko ^a   Watanabe, Yoshio ^a   Muramatsu, Yasuji ^a   Oshima, Masaharu ^a,b  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Core level; GaSb; Growth mechanism; Molecular beam epitaxy; Photoelectron spectroscopy; Realtime analysis; Sub second; Synchrotron radiation

Indexed keywords

GROWTH MECHANISM; MOLECULAR BEAM EPITAXY; REAL TIME ANALYSIS;

ELECTRON DIFFRACTION; MOLECULAR BEAMS; PHOTOELECTRON SPECTROSCOPY; REAL TIME SYSTEMS; SURFACE STRUCTURE; SYNCHROTRON RADIATION;

CRYSTAL GROWTH;

EID: 0030206339     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4457     Document Type: Article

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