Influences of Cu and Fe impurities on oxygen precipitation in Czochralski-grown silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4187-4194

  Shen, Bo ^a,b   Jablonski, Jaroslaw ^a,c   Sekiguchi, Takashi ^a   Sumino, Koji ^a,d  

^a TOHOKU UNIVERSITY   (Japan)

^b NANJING UNIVERSITY   (China)

^c Komatsu Electronic Metals Co Ltd   (Japan)

^d NIPPON STEEL CORPORATION   (Japan)

Author keywords

Cu impurities; Czochralski grown silicon; Fe impurities; Metallic impurities; Oxygen impurities; Oxygen precipitation; Silicon

Indexed keywords

CZOCHRALSKI-GROWN SILICON; OXYGEN IMPURITIES; OXYGEN PRECIPITATION;

COPPER; EXPERIMENTS; FOURIER TRANSFORMS; IMPURITIES; IRON; OXYGEN; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 0030206230     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4187     Document Type: Article

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