Influence of hydrogen content and Si-H bond structure on photocreated dangling bonds in hydrogenated amorphous silicon films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4409-4412

  Zhang, Qing ^a   Nishino, Takayuki ^a   Takashima, Hideki ^a   Kumeda, Minoru ^a   Shimizu, Tatsuo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

Annealing activation energy distribution; Defect pool; Hydrogenated amorphous silicon; Photocreated dangling bond; Stability

Indexed keywords

ANNEALING ACTIVATION ENERGY DISTRIBUTION; DEFECT POOL; HYDROGENATED AMORPHOUS SILICON; PHOTOCREATED DANGLING BOND;

ANNEALING; DEGRADATION; HYDROGENATION; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON; STABILITY;

AMORPHOUS FILMS;

EID: 0030205499     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4409     Document Type: Article

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