Optical energy gap of CuAl2S4 single crystal

Semiconductor Science and Technology

Volumn 11, Issue 8, 1996, Pages 1159-1162

  Bang, Tae Hwan ^a   Choe, Sung Hyu ^a   Park, Bok Nam ^a   Jin, Moon Seog ^b   Kim, Wha Tek ^c  

^a Chosun University   (South Korea)

^b Dongshin University   (South Korea)

^c Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; LATTICE CONSTANTS; SEMICONDUCTOR SUPERLATTICES; SINGLE CRYSTALS;

CHEMICAL TRANSPORT REACTION METHOD; DIRECT BANDGAP; OPTICAL ENERGY GAP;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030205433     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/8/007     Document Type: Article

References (5)

1. Shay J L and Wemick J H 1975 Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications (Oxford: Pergamon) p 188
2. JCPDS (Joint Committee on Powder Diffraction Standards) Card 25-13
3. Ohgoh T, Sato K, Noguchi K and Okuyama K 1995 Japan. J. Appl. Phys. 34 L41
4. Aksenov I, Tasuda T, Segawa Y and Sato K 1993 J. Appl. Phys. 74 2106
5. Pankove J I 1971 Optical Processes in Semiconductors (New York: Dover) p 36