Thin film (Ba,Sr)TiO 3 over stacked RuO 2 nodes for Gbit DRAM capacitors

NEC Research and Development

Volumn 37, Issue 3, 1996, Pages 305-316

  Yoshida, Masaji ^a   Yabuta, Hisato ^a   Sone, Shuji ^a   Takemura, Koichi ^a   Sakuma, Toshiyuki ^a   Kato, Yoshitake ^a   Miyasaka, Yoichi ^a   Iizuka, Toshihiro ^a   Yamamichi, Shintaro ^a   Yamaguchi, Hiromu ^a   Lesaicherre, Pierre Yves ^a   Nishimoto, Shozo ^a  

^a Fundamental Research Lab   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE FREQUENCY DISPERSION ANALYSIS; DRAM CAPACITORS; HIGH DIELECTRIC CONSTANT MATERIAL; PARAELECTRIC MATERIALS; RUTHENIUM DIOXIDE; STRONTIUM TITANATE; TEMPERATURE ENDURANCE;

BARIUM TITANATE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIELECTRIC FILMS; ELECTRON CYCLOTRON RESONANCE; FILM PREPARATION; PERMITTIVITY; RANDOM ACCESS STORAGE; RUTHENIUM COMPOUNDS; STRONTIUM COMPOUNDS; TITANIUM NITRIDE;

THIN FILMS;

EID: 0030197840     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (34)