Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction

Semiconductor Science and Technology

Volumn 11, Issue 7, 1996, Pages 1051-1055

  Mockf P ^a   Tanner, B K ^a   Li, C R ^a   Keir, A M ^b   Johnson, A D ^b   Lacey, G ^c   Clark, G F ^d   Lunn, B ^e   Hogg, J C H ^e  

^a DURHAM UNIVERSITY   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

^e UNIVERSITY OF HULL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); LATTICE CONSTANTS; RELAXATION PROCESSES; THICKNESS CONTROL; X RAY DIFFRACTION;

TOPOGRAPHY;

SEMICONDUCTOR MATERIALS;

EID: 0030197078     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/7/014     Document Type: Article

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