Magnetoresistance anomaly of a two-dimensional electron gas in tilted magnetic fields

Surface Science

Volumn 361-362, Issue , 1996, Pages 533-536

  Streda P ^a   Vasek P ^a   Cukr, M ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Conductivity; Gallium arsenide; Hall effect; Heterojunctions; Models of non equilibrium phenomena; Molecular beam epitaxy; Semiconductor semiconductor heterostructures; Semiconductor semiconductor interfaces

Indexed keywords

ELECTRIC CONDUCTIVITY; HALL EFFECT; INTERFACES (MATERIALS); MAGNETIC FIELDS; MAGNETORESISTANCE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

HALL FIELD; NONEQUILIBRIUM PHENOMENA; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0030196953     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00463-3     Document Type: Article

References (3)

1. D.R. Leadley, R.J. Nicholas, J.J. Harris and C.T. Foxon, in: 20th International Conference on Physics of Semiconductors, Eds. E.M. Anastassakis and J.D. Joannopoulos (World Scientific Publishing Co., Singapore, 1990) p. 1609.
2. W. Zawadzki, S. Klahn and U. Merkt, Phys. Rev. B 33 (1986) 6916.
3. L. Smrčka and T. Jungwirth, J. Phys. Condens. Matter 6 (1994) 55.