Coupled modes and filling factor dependent edge potentials in double-layered antidot arrays

Surface Science

Volumn 361-362, Issue , 1996, Pages 766-769

  Bollweg, K ^a   Kurth, T ^a   Heitmann, D ^a   Vasiliadou, E ^b   Grambow, P ^b   Eberl, K ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Gallium arsenide; Infrared absorption; Magnetic phenomena; Plasmons; Quantum effects; Quantum wells; Semiconductor semiconductor heterostructures; Superlattices

Indexed keywords

ARRAYS; ETCHING; HETEROJUNCTIONS; INFRARED SPECTROSCOPY; INFRARED TRANSMISSION; LIGHT ABSORPTION; MAGNETIC FIELDS; MAGNETIZATION; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

DEEP MESA ETCHING; DOUBLE LAYERED ANTIDOT ARRAYS; EDGE MAGNETO PLASMON MODES; ELECTRON SYSTEMS; FAR INFRARED TRANSMISSION SPECTROSCOPY; PLASMONS; QUANTUM EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030196948     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00529-8     Document Type: Article

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