MBE growth and characterization of buried silicon oxide films on Si(100)

Thin Solid Films

Volumn 280, Issue 1-2, 1996, Pages 107-111

  Hacke, M ^a   Bay, H L ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Growth mechanism; Molecular beam epitaxy; Silicon oxide

Indexed keywords

ANNEALING; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

ION CHANNELING; STRUCTURAL CHANGES; SUBSTRATE TEMPERATURE;

SEMICONDUCTING FILMS;

EID: 0030196818     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08203-4     Document Type: Article

References (15)

1. T. J. Maloney. J. Vac. Sci. Technol. B, 1 (1983) 773.
2. M. Tabe, M. Takahashi and Y. Sakakibara, Jpn. J. Appl. Phys., 26 (1987) 1830.
3. M. Tabe, M. Takahashi, T. Ichimori and Y. Sakakibara, Thin Solid Films, 184 (1990) 373.
4. W.-X. Ni, G. Radnoczi and G. V. Hansson, Thin Solid Films, 184 (1990) 403.
5. S. Lombardo, S.U. Campisano, G. N. van den Hoven and A. Polman, J. Appl. Phys., 77 (1995) 6504.
6. M. Hamasaki, T. Adachi, S. Wakayama and M. Kikuchi, Solid State Commun., 21 (1977) 591.
7. A. I. Bennett and L. M. Roth, Phys. Rev. B, 4 (1971) 2686.
8. H. R. Philipp, J. Phys. Chem. Solids, 32 (1971) 1935.
9. W. Kern, J. Electrochem. Soc., 137 (1990) 1887.
10. L. R. Doolittle, Nucl. Instruin. Methods B, 9 (1985) 344.
11. T. Engel, Surf. Sci. Rep., 18 (1993) 91.
12. F. W. Smith and G. Ghidini, J. Electrochem. Soc., 129 (1982) 1300.
13. J. R. Engstrom, D. J. Bonser, M. M. Nelson and T. Engel, Surf. Sci., 256 (1991) 317.
14. T. J. Maloney, D. E. Aspnes, H. Arwin and T. W. Sigmon, Appl. Phys. Lett., 44 (1984) 517.
15. J. L. Lindström, B. G. Svensson, W.-X. Ni and M. Willander, Phys. Status Solidi (a), 117 (1990) K171.